| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a gallium nitride based semiconductor light emitting element which has an uniform operation voltage and high light emitting efficiency. <P>SOLUTION: In this method a layer composed of indium gallium nitride is formed by metal chemical vapor deposition in a range of a deposition rate of ≥0.5 μm/h and of a temperature between 800°C and 1000°C. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
