| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a resist mask becomes fragile when fine patterning is made by a laser having a short wavelength in a photolithography process, a resist mask is damaged and edge roughness is generated at the edge of a patterned region when etching is made in a plasma atmosphere in this case, and no uniform etching shapes is obtained in a depth direction. SOLUTION: Mixed gas containing fluorocarbon gas and hydrocarbon gas having a flow rate of 1-3 times larger than that of the fluorocarbon gas is used. The mixed gas is introduced under a working pressure of 0.5 Pa or smaller in the plasma atmosphere for etching the interlayer insulation film covered with the resist mask. COPYRIGHT: (C)2005,JPO&NCIPI
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