发明名称 INSPECTION METHOD FOR CHARGED PARTICLE BEAM MASK, INSPECTION APPARATUS FOR CHARGED PARTICLE BEAM MASK AND CHARGED PARTICLE BEAM MASK DATA STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To inspect masks for transferring patterns by using two or more masks so as to relieve a pseudo defect in a part where no problem is caused from the viewpoint of a device while keeping the inspection accuracy in a pattern region. <P>SOLUTION: A pseudo defect is relieved by dividing a pattern into a stitching part and the other pattern portion on comparing the mask image to mask data and by decreasing the defect detection sensitivity in the stitching part than that in the pattern portion. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005250106(A) 申请公布日期 2005.09.15
申请号 JP20040060468 申请日期 2004.03.04
申请人 RENESAS TECHNOLOGY CORP 发明人 YAMAMOTO JIRO
分类号 G03F1/20;G03F1/84;H01L21/027 主分类号 G03F1/20
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