发明名称 |
METHOD AND DEVICE FOR FORMING PATTERN TYPE PHOTORESIST LAYER |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and a device for forming a pattern type photoresist layer capable of shortening a cycle time and a re-processing time in a pattern transfer process. <P>SOLUTION: The forming method of the pattern type photoresist layer matched with a predetermined wafer layer is provided. The photoresist layer is formed on a substrate and exposed. An overlaid offset between the exposed part of the photoresist layer and the predetermined wafer layer is measured to determine whether the exposed part of the photoresist layer matches with the predetermined wafer layer or not. A development stage is effected in the case that the exposed part of the photoresist layer matches with the predetermined wafer layer. A device is also provided for forming the pattern type photoresist layer. This device feedbacks immediately the overlaid offset utilizing the method, whereby the cycle time and the re-processing time in the pattern transfer process are shortened. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005252025(A) |
申请公布日期 |
2005.09.15 |
申请号 |
JP20040061127 |
申请日期 |
2004.03.04 |
申请人 |
UNITED MICROELECTRONICS CORP |
发明人 |
RIN RYOKETSU;WU DE-HUNG;KO KOKUSHUN |
分类号 |
G03F9/00;G03F7/20;H01L21/00;H01L21/027 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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