| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multilayer film formed by a sputtering method, the multilayer film mirror having a small decrease in reflection factor. <P>SOLUTION: The multilayer film mirror formed by the sputtering method is characterized in that a multilayer film of the multilayer film mirror contains <0.005 atm% sputter (process) gas. The decrease in reflection factor critically varies to become small when the content of the sputter (process) gas in the multilayer film of the multilayer film mirror becomes <0.005 atm%. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
