| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability by restraining generation of leakage current by SiGe exposed to an element isolation edge. SOLUTION: In a field effect transistor, a strained Si layer 7 having lattice strain is formed on an SiGe layer 6 in which lattice strain is eased, a gate electrode 3 is selectively formed through a gate insulated film 9 on the strained Si layer 7, and a source drain region 12 is formed on a position corresponding to the gate electrode 3 of the strained Si layer 7. The SiGe layer 6 is removed at the element isolation edge in which element isolation should be performed, and a film 7 of Si is formed so as to cover the side wall of the SiGe layer 6 of the element isolation edge. COPYRIGHT: (C)2005,JPO&NCIPI
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