| 摘要 |
PROBLEM TO BE SOLVED: To form linear grating that has satisfactory properties, without causing projecting defects. SOLUTION: When a resist pattern that covers areas c and d is formed, a resist pattern 22 is formed by displacing a mask pattern such that the groove of the area c is completely covered even in the case that a alignment error occurs (step 3). The surface of the resist pattern 22 is etched to leave a lower resist pattern 22A that is the same level as the top of a silicon substrate 11 (step 4). On the lower resist pattern, an upper resist pattern 23 that has the same pattern as the resist pattern 22 is formed (step 5). At the time, the mask pattern is displaced so that one edge of the upper resist pattern 23 is located on the lower resist pattern 22A and the other edge of it is located on the boundary of a prescribed area, and also an amount of exposure is adjusted. Next, the silicon substrate 11 is etched using the lower resist pattern 22A and the upper resist pattern as a mask. COPYRIGHT: (C)2005,JPO&NCIPI
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