发明名称 |
Non-activated guard ring for semiconductor devices |
摘要 |
A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.
|
申请公布号 |
US2005202661(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20040935000 |
申请日期 |
2004.09.07 |
申请人 |
CERUZZI ALEX;POPHRISTIC MILAN;SHELTON BRYAN S.;LIU LINLIN;MURPHY MICHAEL;ZHU TING G. |
发明人 |
CERUZZI ALEX;POPHRISTIC MILAN;SHELTON BRYAN S.;LIU LINLIN;MURPHY MICHAEL;ZHU TING G. |
分类号 |
H01L21/44;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|