| 摘要 |
The present invention provides a method for fabricating a semiconductor structure having the steps of: providing a semiconductor substrate ( 1 ) made of silicon with a first hard mask layer ( 10; 10' ) made of silicon oxide and an overlying second hard mask layer ( 15; 15' ) made of silicon; providing a masking layer ( 30; 30' ) made of silicon oxide above and laterally with respect to the second hard mask layer ( 15; 15' ) made of silicon and above an uncovered edge region (RB) of the semiconductor substrate ( 1 ); providing a photoresist mask ( 25 ) above the masking layer ( 30; 30' ) with openings corresponding from trenches (DT) to be formed in the semiconductor substrate ( 1 ); opening the masking layer ( 30; 30' ) in a first plasma process using the photoresist mask ( 25 ), the edge region (RB) being covered by a shielding device (AR); opening the first hard mask layer ( 10; 10' ) and second hard mask layer ( 15; 15' ) in a second and third plasma process; and forming the trenches (DT) in the semiconductor substrate ( 1 ) in a fourth plasma process using the opened first hard mask layer ( 10; 10' ); the edge region (RB) not being covered by the shielding device (AR) in the second to fourth plasma processes.
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