| 摘要 |
A CVD apparatus has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for air-tightly sealing the reaction furnace (39), an isolation flange (42) opposite the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction chamber (39); a feeding tube (19b) for feeding a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) and allowing the first gas to flow out into the reaction furnace (39); and a feeding tube (19a) provided on the downstream side of the outflow passage (42a) and feeding a second gas into the reaction furnace (39). In the apparatus, by- products, such as NH4Cl, can be prevented from adhering to low temperature portions including a furnace opening, and this increases the yield percentage of semiconductor device production.
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