Silicon oxide layer reduced in dangling bonds through treatment with hypofluorous acid, process for growing silicon oxide layer and method for deactivating dangling bonds therein,申请号KR20020042214-传众专利搜索

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发明名称	Silicon oxide layer reduced in dangling bonds through treatment with hypofluorous acid, process for growing silicon oxide layer and method for deactivating dangling bonds therein
摘要
申请公布号	KR100514603(B1)	申请公布日期	2005.09.14
申请号	KR20020042214	申请日期	2002.07.18
申请人		发明人
分类号	H01B3/46;H01L21/316;C04B35/14;(IPC1-7):H01B3/46	主分类号	H01B3/46
代理机构		代理人
主权项
地址

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