发明名称 |
PROCESS FOR PRODUCING SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR AND CRYSTAL GROWING APPARATUS |
摘要 |
In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure). <IMAGE> |
申请公布号 |
EP1574602(A1) |
申请公布日期 |
2005.09.14 |
申请号 |
EP20030748696 |
申请日期 |
2003.10.03 |
申请人 |
NIKKO MATERIALS CO., LTD. |
发明人 |
ASAHI, TOSHIAKI;SATO, KENJI,;YABE, TAKAYUKI;ARAKAWA, ATSUTOSHI |
分类号 |
C30B15/12;C30B15/00;C30B27/02;C30B29/48;(IPC1-7):C30B15/12 |
主分类号 |
C30B15/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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