| 发明名称 |
METHOD OF HEAT TREATMENT OF SILICON WAFER DOPED WITH BORON |
| 摘要 |
A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein the argon atmosphere is replaced with a hydrogen atmosphere or a mixed gas of an argon gas and a hydrogen gas in a proper fashion, to thereby uniformize a boron concentration in the thickness direction of the surface layer of the silicon wafer doped with boron. <IMAGE> |
| 申请公布号 |
EP1347508(A4) |
申请公布日期 |
2005.09.14 |
| 申请号 |
EP20010272288 |
申请日期 |
2001.12.21 |
| 申请人 |
KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA |
发明人 |
SATO, YUJI;YOSHINO, SHIROU;FURUKAWA, HIROSHI;MATSUYAMA, HIROYUKI |
| 分类号 |
C30B29/06;H01L21/322;H01L21/324;H01L21/336 |
主分类号 |
C30B29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
