| 摘要 |
A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an In<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N (0<=x<=1, 0<=y<=1, x+y<=1), and a spacer layer interposing the light emitting layer and the In<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N layer. The spacer layer may advantageously space the In<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.
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