摘要 |
A method of manufacturing semiconductor devices includes the following steps. That is, a support board is adhered to a rear surface of a substrate proper which has a plurality of circuit element parts with prescribed functions formed on a circuit forming plane on an obverse surface thereof. First groove portions are formed in the substrate proper. An insulating film ( 17 ) is formed on a surface of a semiconductor substrate ( 50 ) by using an insulating material, and holes are formed in the first groove portions. Metal wiring patterns ( 8 ) are formed which extend from electrode portions to at least parts of inner walls of the holes. A prescribed amount of the support board at a bottom of each of the holes is removed. A conductive material is filled into the holes thereby to form penetration electrodes ( 10 ). A second groove portions are formed in the first groove portions.
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