发明名称 Semiconductor device manufacturing method and electronic equipment using same
摘要 A method of manufacturing semiconductor devices includes the following steps. That is, a support board is adhered to a rear surface of a substrate proper which has a plurality of circuit element parts with prescribed functions formed on a circuit forming plane on an obverse surface thereof. First groove portions are formed in the substrate proper. An insulating film ( 17 ) is formed on a surface of a semiconductor substrate ( 50 ) by using an insulating material, and holes are formed in the first groove portions. Metal wiring patterns ( 8 ) are formed which extend from electrode portions to at least parts of inner walls of the holes. A prescribed amount of the support board at a bottom of each of the holes is removed. A conductive material is filled into the holes thereby to form penetration electrodes ( 10 ). A second groove portions are formed in the first groove portions.
申请公布号 US6943056(B2) 申请公布日期 2005.09.13
申请号 US20030405462 申请日期 2003.04.03
申请人 RENESAS TECHNOLOGY CORP. 发明人 NEMOTO YOSHIHIKO
分类号 H01L21/60;H01L21/68;H01L21/768;H01L23/48;H01L23/482;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 主分类号 H01L21/60
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