| 发明名称 |
Method and system for programming and inhibiting multi-level, non-volatile memory cells |
| 摘要 |
A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
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| 申请公布号 |
US6944068(B2) |
申请公布日期 |
2005.09.13 |
| 申请号 |
US20040809571 |
申请日期 |
2004.03.24 |
| 申请人 |
SANDISK CORPORATION |
发明人 |
QUADER KHANDKER N.;NGUYEN KHANH T.;PAN FENG;PHAM LONG C.;MAK ALEXANDER K. |
| 分类号 |
G11C16/02;G11C11/56;G11C16/04;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/02 |
| 代理机构 |
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