发明名称 Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser
摘要 A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
申请公布号 US6944199(B2) 申请公布日期 2005.09.13
申请号 US20030460823 申请日期 2003.06.12
申请人 OSRAM GMBH 发明人 ACKLIN BRUNO;BEHRINGER MARTIN;EBELING KARL;HANKE CHRISTIAN;HEERLEIN JOERG;KORTE LUTZ;LUFT JOHANN;SCHLERETH KARL-HEINZ;SPAETH WERNER;SPIKA ZELJKO
分类号 H01S5/042;H01S5/16;H01S5/227;(IPC1-7):H01S5/00 主分类号 H01S5/042
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