发明名称 |
Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser |
摘要 |
A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
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申请公布号 |
US6944199(B2) |
申请公布日期 |
2005.09.13 |
申请号 |
US20030460823 |
申请日期 |
2003.06.12 |
申请人 |
OSRAM GMBH |
发明人 |
ACKLIN BRUNO;BEHRINGER MARTIN;EBELING KARL;HANKE CHRISTIAN;HEERLEIN JOERG;KORTE LUTZ;LUFT JOHANN;SCHLERETH KARL-HEINZ;SPAETH WERNER;SPIKA ZELJKO |
分类号 |
H01S5/042;H01S5/16;H01S5/227;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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