发明名称 Wafer processing apparatus and methods for depositing cobalt silicide
摘要 A cluster tool and a number of different processes for making a cobalt-silicide material are disclosed. Combinations of alloyed layers of Co-Ti-along with layers of Co-are arranged and heat treated so as to effectuate a silicide reaction. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor processing. A cluster tool is configured with appropriate sputter targets/heat assemblies to implement many of the needed operations for the silicide reactions, thus resulting in higher savings, productivity, etc.
申请公布号 US6943110(B1) 申请公布日期 2005.09.13
申请号 US20030640779 申请日期 2003.08.13
申请人 发明人
分类号 H01L21/00;H01L21/28;H01L21/285;H01L21/336;(IPC1-7):H01L21/44 主分类号 H01L21/00
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