发明名称 Substrate for integrating and forming a thin film semiconductor device thereon
摘要 Substrates suitable to manufacture and products of a thin film semiconductor device are provided, by at first preparing a manufacturing substrate having a characteristic capable of enduring a process for forming a thin film transistor and a product substrate having a characteristic of being suitable to direct mounting of the thin film transistor in a preparatory step, then applying a bonding step to bond the manufacturing substrate to the product substrate for supporting the product substrate at the back, successively applying a formation step to form at least a thin film transistor to the surface of the product substrate in a state reinforced with the manufacturing substrate and, finally, applying a separation step to separate the manufacturing substrate after use from the product substrate.
申请公布号 US6943369(B2) 申请公布日期 2005.09.13
申请号 US20010808957 申请日期 2001.03.16
申请人 SONY CORPORATION 发明人 HAYASHI HISAO
分类号 G02F1/136;G02F1/1368;G09F9/30;H01L21/00;H01L21/02;H01L21/30;H01L21/336;H01L27/12;H01L27/32;H01L29/786;H01L31/036;H01L35/24;H01L51/00;H01L51/56;(IPC1-7):H01L35/24 主分类号 G02F1/136
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