发明名称 |
Atomic layer deposition of metallic contacts, gates and diffusion barriers |
摘要 |
The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.
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申请公布号 |
US6943097(B2) |
申请公布日期 |
2005.09.13 |
申请号 |
US20030643534 |
申请日期 |
2003.08.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL, JR. CYRIL;KIM HYUNGJUN;ROSSNAGEL STEPHEN M. |
分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L29/49;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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