发明名称 |
Control of memory arrays utilizing zener diode-like devices |
摘要 |
The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array. State change voltages can be applied to a single device in the array of semiconductor devices without the need for transistor-type voltage controls. The diodic effect of the present invention facilitates this activity by allowing specific voltage levels necessary for state changes to only occur at the desired device. In this manner, an array of devices can be programmed with varying data or states without utilizing transistor technology. The present invention also allows for an extremely efficient method of producing these types of devices, eliminating the need to manufacture costly external voltage controlling semiconductor devices.
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申请公布号 |
US6943370(B2) |
申请公布日期 |
2005.09.13 |
申请号 |
US20040882538 |
申请日期 |
2004.06.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
VANBUSKIRK MICHAEL A.;BILL COLIN;FANG TZU-NING;LAN ZHIDA |
分类号 |
G11C11/56;G11C13/02;G11C16/02;(IPC1-7):H01L51/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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