发明名称 |
Semiconductor device including bipolar transistor and buried conductive region |
摘要 |
A semiconductor device and a method for manufacturing the device using a semiconductor substrate of a high resistance with improved Q value of a passive circuit element. Leakage current due to an impurity fluctuation, in the high resistance semiconductor substrate and noise resistance of an active element in the high resistance semiconductor substrate are improved. The semiconductor device includes a bipolar transistor at a main surface of and in the semiconductor substrate. The bipolar transistor includes a semiconductor layer of a first conductivity type at a bottom portion of the bipolar transistor and the semiconductor device includes a buried layer of a second conductivity type, located in the semiconductor substrate and facing the semiconductor layer of the first conductivity type.
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申请公布号 |
US6943428(B2) |
申请公布日期 |
2005.09.13 |
申请号 |
US20020229138 |
申请日期 |
2002.08.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FURUKAWA TAISUKE;YONEDA YOSHIKAZU;IKEDA TATSUHIKO |
分类号 |
H01L21/331;H01L21/8249;H01L27/06;H01L29/732;H01L29/737;(IPC1-7):H01L27/082;H01L27/102;H01L29/70;H01L31/11 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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地址 |
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