METHOD OF FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE
摘要
A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate in which the strained semiconductor is a thin semiconductor layer having a thickness of less than 50 nm that is located directly atop an insulator layer of a preformed silicon-on-insulator substrate is provided. Wafer bonding is not employed in forming the SSOI substrate of the present invention.
申请公布号
WO2005055290(A3)
申请公布日期
2005.09.09
申请号
WO2004EP53204
申请日期
2004.12.01
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;BEDELL, STEPHEN;COHEN, GUY;CHEN, HUAJIE