发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA OXIDATION METHOD |
摘要 |
A polysilicon electrode layer (103) (a first electrode layer) is formed by forming a polysilicon film on a gate oxide film (102) on a silicon wafer (101). A tungsten layer (105) (a second electrode layer) is formed on this polysilicon electrode layer (103). In addition, a barrier layer (104) is formed on the polysilicon electrode layer (103) before the formation of the tungsten layer (105). Etching is then conducted using a silicon nitride layer (106) as the etching mask. Next, an oxide insulating film (107) is formed on an exposed surface of the polysilicon layer (103) by plasma oxidation wherein a process gas containing oxygen gas and hydrogen gas is used at a process temperature not less than 300˚C. With this method, a selective oxidation of the polysilicon electrode layer (103) can be carried out without oxidizing the tungsten layer (105).
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申请公布号 |
WO2005083795(A1) |
申请公布日期 |
2005.09.09 |
申请号 |
WO2004JP02488 |
申请日期 |
2004.03.01 |
申请人 |
TOKYO ELECTRON LIMITED;SASAKI, MASARU;KABE, YOSHIRO |
发明人 |
SASAKI, MASARU;KABE, YOSHIRO |
分类号 |
H01L21/28;H01L21/316;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L29/78;H01L29/58 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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