发明名称 A FABRICATION METHOD FOR MAKING A PLANAR CANTILEVER, LOW SURFACE LEAKAGE, REPRODUCIBLE AND RELIABLE METAL DIMPLE CONTACT MICRO-RELAY MEMS SWITCH, AND A MICROELECTROMECHANICAL DEVICE HAVING A COMMON GROUND PLANE LAYER AND A SET OF CONTACT TEETH AND METHOD FOR MAKING THE SAME
摘要 A method for pseudo-planarization of an electromechanical device and for forming a durable metal contact on the electromechanical device and devices formed by the method are presented. The method comprises acts of depositing various layers forming a semiconductor device. Two principal aspects of the method include the formation of a planarized dielectric/conductor layer on a substrate and the formation of an electrode in an armature of a microelectromechanical switch, with the electrode formed such that it interlocks a structural layer of the armature to ensure it remains fixed to the armature over a large number of cycles. The present invention also relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.
申请公布号 WO2005082774(A2) 申请公布日期 2005.09.09
申请号 WO2005US05272 申请日期 2005.02.17
申请人 WIRELESS MEMS INCORPORATED;CHOU, CHIA-SHING 发明人 CHOU, CHIA-SHING
分类号 B44C1/22;B81B3/00;B81C1/00;C03C15/00;C03C25/68;C23F1/00;H01H1/00;H01H51/22;H01H57/00;H01H59/00;H01L21/00;H01L31/00;H01P1/10 主分类号 B44C1/22
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