发明名称 PARTICLE DEPOSITED SUBSTRATE
摘要 <p>A particle deposited substrate can be manufactured by using an atmospheric plasma sputtering method, without using expensive vacuum equipment. Particles can be grown at a low temperature of 200°C or below, and the various nano-order particles of a metal or its oxide with controlled particle diameter, particle density, patterning and integration degree directly adhere by themselves even in a primary particle status with excellent adhesiveness without using an adhesive medium such as binder, filler, etc. in between.</p>
申请公布号 WO2005083149(A1) 申请公布日期 2005.09.09
申请号 WO2005JP02316 申请日期 2005.02.16
申请人 KONICA MINOLTA HOLDINGS, INC.;KONDO, YOSHIKAZU 发明人 KONDO, YOSHIKAZU
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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