CONTROLLING REMOVAL RATE UNIFORMITY OF AN ELECTROPOLISHING PROCESS IN INTEGRATED CIRCUIT FABRICATION
摘要
A metal layer formed on a wafer, the wafer having a center portion and an edge portion, is electropolished by aligning a nozzle and the wafer to position the nozzle adjacent to the center portion of the wafer. The wafer is rotated. As the wafer is rotated, a stream of electrolyte is applied from the nozzle onto a portion of the metal layer adjacent to the center portion of the wafer to begin to electropolish the portion of the metal layer with a triangular polishing profile to initially expose an underlying layer underneath the metal layer at a point.
申请公布号
WO2005082057(A2)
申请公布日期
2005.09.09
申请号
WO2005US06142
申请日期
2005.02.23
申请人
ACM RESEARCH, INC.;WANG, HUI;AFNAN, MUHAMMED;WANG, JIAN;GUTMAN, FELIX;HO, FREDERICK;CHOKSHI, HIMANSHU, J.
发明人
WANG, HUI;AFNAN, MUHAMMED;WANG, JIAN;GUTMAN, FELIX;HO, FREDERICK;CHOKSHI, HIMANSHU, J.