| 摘要 |
Fabrication of a diode (DL) of small dimensions between two silicon electrodes (ELn, GRST) arranged above a substrate (30) comprises: (a) realisation of the two electrodes above the substrate, separated by a gap; (b) thermal oxidation of a part of the thickness of the electrodes, in height and width, leaving a space between the oxidised electrodes, the substrate being protected against oxidation in this space; (c) denuding the surface of the substrate in this space; (d) deposition of a layer of doped polycrystalline silicon coming into contact in this space with the substrate to form a pole of the diode, the substrate forming the other pole; (e) partial elimination of the polycrystalline silicon leaving a desired pattern, this pattern covering at least the space left between the electrodes and equally covering a region situated outside this space; (f) deposition of an insulating layer (18), local engraving of an opening in the insulating layer above the polycrystalline sil! icon outside of the space between the electrodes, forming a zone of deported contact, deposition of a metal layer coming into contact with the polycrystalline silicon in the zone of deported contact and engraving of the metal layer according to a desired interconnection pattern. An independent claim is also included for an integrated circuit incorporating a register for the transfer of charges with a reading diode at the end of the register. |
