PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

The oxide film (2) of a sensor element (11) is formed on a rectangular substrate (1), a diaphragm (3) is formed on the oxide film (2), fixing units (4) are formed on the diaphragm (3), a back electrode (5) is formed on the fixing units (4) so as to face the substrate (1), a gap area (6) is formed between the substrate (1) and the back electrode (5) by the fixing units (4), and a rectangular jetting (12) is formed to be positioned between the sensor element (11) and the sides so as to surround the back electrode (5) formed on the fixing units (4). The jetting (12) can prevent foreign matters (104) produced at dicing from intruding into the semiconductor element (11).