| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and method which can keep a working shape constant, with respect to the plasma processing apparatus and method which are suitable to the fine working of semiconductor devices. SOLUTION: The plasma processing apparatus has a processing container 1a forming a processing chamber 1, processing-gas feeding apparatuses 3, 4 for feeding a processing gas to the inside of the processing chamber 1, a plasma generating means 2 for so feeding an electromagnetic energy to the inside of the processing chamber as to generate a plasma by dissociating the plasma gas fed to the inside of the processing chamber, and a means 12 for heating or cooling the vacuum processing container, and it subjects a wafer carried to the inside of the processing chamber to a plasma processing. Further, there is provided in it a processing-chamber-surface-temperature controlling portion 15 for controlling the inner-surface temperature of the processing chamber, and prior to a wafer processing performed after a cleaning processing, the controlling portion so generates the plasma in the inside of the processing chamber by using a processing time set previously according to a processing hysteresis as to heat the inner surface of the processing chamber and as to control the inner-surface temperature of the processing chamber. COPYRIGHT: (C)2005,JPO&NCIPI
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