SUBSTRATE TREATMENT APPARATUS

摘要

PROBLEM TO BE SOLVED: To prevent the generation of a particle or metal contamination while properly controlling a temperature of a metallic manifold in accordance with running conditions. SOLUTION: A CVD system 10 comprises: a treatment chamber 24 wherein a wafer 1 is treated; a heater unit 20 for heating the treatment chamber 24; a gas feeding pipe 45 for feeding gas into the treatment chamber 24; an exhaust pipe 44 for exhausting air in the treatment chamber 24; a manifold 26 formed using stainless steel; a temperature control gas conduit 33 laid on a flange 29 of the manifold 26; a temperature control gas conduit 38 laid at a jacket ring 37 of the outer circumference of the manifold 26; a flow rate controller 41 for controlling a flow rate of temperature control gas 43; and a temperature detector 42 for detecting the temperature of the manifold 26. The flow rate controller 41 is then configured to control the flow rate of the temperature control gas based on the detection result of the temperature detector 42. COPYRIGHT: (C)2005,JPO&NCIPI