发明名称 |
Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same |
摘要 |
A metal salicide layer is formed by sequentially depositing a physical vapor deposition (PVD) metal layer and a chemical vapor deposition (CVD) metal layer on a semiconductor device having an exposed silicon surface so as to form a double metal layer. The semiconductor device is annealed to react the double metal layer with the silicon surface. At least a portion of the double layer that has not reacted with the silicon surface is stripped. The semiconductor device is annealed after stripping at least the portion of the double metal layer.
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申请公布号 |
US2005196945(A1) |
申请公布日期 |
2005.09.08 |
申请号 |
US20050044884 |
申请日期 |
2005.01.27 |
申请人 |
YUN JONG-HO;CHOI GIL-HEYUN;CHEONG SEONG-HWEE;JUNG SUG-WOO;KIM HYUN-SU;SOHN WOONG-HEE |
发明人 |
YUN JONG-HO;CHOI GIL-HEYUN;CHEONG SEONG-HWEE;JUNG SUG-WOO;KIM HYUN-SU;SOHN WOONG-HEE |
分类号 |
H01L21/24;H01L21/3205;H01L21/44;H01L21/4763;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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