| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device and its data erasing method with which the erasing time can be shortened. <P>SOLUTION: The data erasing method for the nonvolatile semiconductor storage device has a plurality of blocks BLK consisting of a plurality of electrically rewritable memory cells and can erase the data on a block by block basis. This data erasing method is equipped with following processes. A block group to which the block to be erased belongs is detected among the plurality of block groups SCT consisting of the plurality of blocks. Within the block group to which the block to be erased belongs, the block to be erased is detected. The data for the memory cell inside the detected block to be erased is erased. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
