| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an indium compound spintronics material capable of simultaneously controlling magnetism and electric conductivity. <P>SOLUTION: This indium compound spintronics material is produced by doping at least one element selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb into indium oxide, and is composed such that the point symmetry of unit cells has the lattice translation structure of scandium oxide type crystal structure. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
