| 发明名称 |
Single crystal silicon sensor with additional layer and method of producing the same |
| 摘要 |
A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.
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| 申请公布号 |
US2005196933(A1) |
申请公布日期 |
2005.09.08 |
| 申请号 |
US20040791638 |
申请日期 |
2004.03.02 |
| 申请人 |
NUNAN THOMAS K.;BROSNIHAN TIMOTHY J. |
发明人 |
NUNAN THOMAS K.;BROSNIHAN TIMOTHY J. |
| 分类号 |
B81B3/00;B81B7/02;G01P15/08;G01P15/125;(IPC1-7):H01L21/00 |
主分类号 |
B81B3/00 |
| 代理机构 |
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