Semiconductor structure manufacturing method especially for deep trench memory circuits made with sub-100 nm technology, whereby doped silicon is deposited over the trench structure using on over-conforming separation method

摘要

Semiconductor structure manufacturing method has the following steps: provision of a semiconductor substrate (1) with a trench (5) and deposition of a filling layer (10b) of doped silicon to fill the trench and cover the surrounding structure using an over-conforming separation method that has an over-conforming separation rate due to a dosing concentration gradient. This ensures that the trench is at least partially filled from the bottom to the top.