| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an optoelectronic integrated circuit with high operation speed and high photosensitivity, in which a bipolar transistor and an optical device are appropriately provided by reducing the possibility that their performances are canceled with each other. <P>SOLUTION: A photodiode 2 composed of a cathode contact layer 5, an active layer 6, and an anode contact layer 7 is provided on a semi-insulating InP substrate 4. Adjacent to the photodiode 2, an InP-based HBT 3 is provided on a collector contact layer 10 which is formed of the same material as that of the cathode contact layer 5 and provided on the substrate 4 independently of the cathode contact layer 5. The HBT 3 is composed of a collector layer 11, a base layer 12, and an emitter layer 13. The collector layer 11, the base layer 12, and the emitter layer 13 are formed separately from the cathode contact layer 5, the active layer 6, and the anode contact layer 7. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
