| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of semiconductor deice and its manufacturing method capable of suppressing defective contacting to a source/drain region of a memory cell transistor, without causing fluctuation in characteristics of a peripheral element, related to a logic semiconductor device mounted with a nonvolatile semiconductor memory. SOLUTION: The semiconductor device comprises a gate electrode 112 formed at a semiconductor substrate 10, a side wall spacer 116 formed on a side wall part of the gate electrode 112, a side wall spacer 144 formed on the side wall part of the gate electrode 112 where the side wall spacer 116 is formed, and an oxide film 115 which is formed between the semiconductor substrate 10 and the side wall spacer 116 and side wall spacer 144 and whose film thickness between the semiconductor substrate 10 and the side wall spacer 144 is less than that between the the semiconductor substrate 10 and the side wall spacer 116. COPYRIGHT: (C)2005,JPO&NCIPI
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