| 摘要 |
PROBLEM TO BE SOLVED: To enable the exposure of an electrode on a magnetoresistance effect element and planrization of an insulating film by one time polishing process, by improving the method for film deposition of the insulating film under a bit line, and the polishing process of the film containing the insulating film. SOLUTION: When forming a second wiring (bit line) 12, after forming the magnetoresistance effect element 13 of a magnetic storage device, the manufacturing method comprises a process of forming a first insulating film 25 that covers the magnetoresistance effect element pattern, including an electrode 14 on the magnetoresistance effect element 13; a process of forming a second insulating film 26 so that it may cover with the state of transferring the convex configuration of the magnetoresistance effect element pattern part, with which the first insulator layer 25 is covered; a process of exposing the electrode 14 upper part, by polishing and removing selectively the convex configuration part of the first and the second insulating films 25 and 26; and a process of planarizing the insulating films. At polishing, the convex configuration part is selectively polished, and also a slurry is used, when the second insulating film 26 is polished. COPYRIGHT: (C)2005,JPO&NCIPI
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