发明名称 |
Semiconductor production apparatus |
摘要 |
A semiconductor production apparatus for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by a plasma generated in the container is disclosed. The temporal change of the amount of light is detected for at least two wavelengths obtained from the wafer surface for a predetermined period of the processing time. The etching condition is determined by comparing a predetermined time with the time length between a time point at which the temporal change amount of the light of one of the two wavelengths assumes a maximum value and a time point at which the amount of light of the other wavelength assumes a minimum value.
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申请公布号 |
US2005194095(A1) |
申请公布日期 |
2005.09.08 |
申请号 |
US20040790185 |
申请日期 |
2004.03.02 |
申请人 |
USUI TATEHITO;YOSHIGAI MOTOHIKO;JOO KAZUHIRO;NAKAMOTO SHIGERU |
发明人 |
USUI TATEHITO;YOSHIGAI MOTOHIKO;JOO KAZUHIRO;NAKAMOTO SHIGERU |
分类号 |
C23F1/00;(IPC1-7):C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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