| 摘要 |
A method of manufacturing integrated circuits is provided. The method includes: conditioning of a depositing chamber; introducing of at least a substrate in said depositing chamber; depositing of a compound that does not contain oxygen on said substrate(s); removing of said substrate(s) from said depositing chamber; and cleaning of said chamber with a cleaning plasma. According to an embodiment of the invention, the conditioning step implements a depositing of a conditioning compound containing at least one oxygen atom, so as to react with at least one internal wall of said chamber in order to create a protective layer on the latter.
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