| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of reducing the electric leakage property of a low-temperature polysilicon pixel TFT and to lower a manufacturing cost for driving a pixel TFT integrated circuit. SOLUTION: In the manufacturing method of a liquid crystal display device, a substrate is provided, and an amorphous silicon layer that includes a first region and a second region is formed on the substrate. After that, a light-reflecting layer is formed on the first region, and the amorphous silicon layer is irradiated by an optical source. The light-reflecting layer located in the first region reflects a part of light irradiated on the first region, and the first region and the second region are converted to a first polysilicon layer and a second silicon layer, respectively. Finally, the grain size of the second polysilicon layer is changed to a grain size larger than that of the first polysilicon layer. COPYRIGHT: (C)2005,JPO&NCIPI |
