SEMICONDUCTOR THIN FILM, METHOD AND DEVICE FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the nonuniformity of crystallinity in an added part in the lengthwise direction of a laser light irradiation area when a semiconductor thin film in a larger area than a length in the lengthwise direction of the laser light irradiation area is crystallized by laser annealing. SOLUTION: When at least two lines of long laser lights 11A and 11B are added by two rows or more per line and they are directed to the surface of a semiconductor thin film 12 formed on a substrate 10, added parts 14A and 14B in at least two lines of laser lights 11A and 11B are made not to overlap in position in the lengthwise direction during irradiation. The added parts 14A and 14B of the respective lines of the laser lights 11A and 11B are adjusted, so that they may be overlaid in an area whose laser intensity E of a slope at a beam profile end in the lengthwise direction of adjoining lines is more than 20% to 80% or less. COPYRIGHT: (C)2005,JPO&NCIPI