STRAINED SILICON WAFER AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a distorted silicon wafer and a manufacturing method thereof which is capable of further reducing the threading dislocation density of a distorted Si layer formed on a SiGe layer in a distorted silicon wafer with the SiGe layer. SOLUTION: A manufacturing method of a distorted silicon wafer comprises the steps of: forming a graded SiGe layer having a Ge composition ratio progressively increased stepwise on a single crystal silicon substrate; forming a SiGe constant composition layer having a Ge composition ratio almost equivalent to the Ge composition ratio on the surface of the graded SiGe layer; and forming a distorted Si layer having a thickness of less than 15 nm and a threading dislocation density of 1×103cm-2or less on the graded SiGe layer. COPYRIGHT: (C)2005,JPO&NCIPI