| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma generation method in which high processing control of a precision is possible in etching processing or padding. <P>SOLUTION: The plasma generation method includes a gas discharging step of exhausting in a chamber 20, a first gas leading step of introducing a first reactant gas in the chamber 20, a first plasma generation step of generating a plasma based on the first reaction gas in the chamber 20, a second gas leading step of introducing the second reactant gas in the chamber 20, and a second plasma generation step of generating the plasm based on the second reaction gas in the chamber 20. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
