发明名称 Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
摘要 The present invention describes a method of obtaining an absorber layer for a solar cell, That method includes depositing a preparatory material comprising a melt of at least one Group IIIA material on a base to form a precursor layer, and reacting the precursor layer with at least one Group VIA material to form a dense Group IBIIIAVIA absorber layer. The method described above can further include forming the preparatory material, the preparatory material comprising the melt of at least one Group IIIA material and a solid phase in the form of particles, such that the solid phase in the form of particles is included within the melt during the step of depositing. Various techniques for applying the preparatory material to the base as a melt are also described.
申请公布号 US2005194036(A1) 申请公布日期 2005.09.08
申请号 US20050070835 申请日期 2005.03.01
申请人 BASOL BULENT M. 发明人 BASOL BULENT M.
分类号 B05D7/00;B28B19/00;(IPC1-7):B28B19/00 主分类号 B05D7/00
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