Method for forming a semiconductor device having metal silicide

摘要

In one embodiment, a top surface of a semiconductor device ( 18 ) is amorphized in a tool ( 1 ). A metal is deposited over the semiconductor substrate using the same tool. In one embodiment, the same chambers are used. In an embodiment, the tool is a sputtering tool, such as a physical vapor deposition (PVD). The semiconductor substrate may be annealed to form a metal silicide ( 122 ) over at least a portion of the semiconductor device that includes silicon.