发明名称 |
Copper interconnect oxidation preventing method in semiconductor device, involves etching nitride layer to expose portion of lower copper interconnect and supplying preset gas to exposed portion of lower copper interconnect |
摘要 |
<p>Nitride layer (3) is etched to expose portion of the lower copper interconnect (2). Nitrogen gas or hydrogen gas is supplied to the exposed portion of the lower copper interconnect.</p> |
申请公布号 |
DE102004062859(A1) |
申请公布日期 |
2005.09.08 |
申请号 |
DE20041062859 |
申请日期 |
2004.12.21 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC., GYEONGGI |
发明人 |
LEE, DATE GUN |
分类号 |
H01L21/28;H01L21/3205;H01L21/44;H01L21/4763;H01L21/768;H01L23/52;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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