| 摘要 |
<P>PROBLEM TO BE SOLVED: To effectively use a GaAs substrate for light emitting layer portion growth which has been removed wholly as a functional element constituting element, and also to improve extraction efficiency of light emission to exterior. <P>SOLUTION: A compound semiconductor layer 10k for separation comprising III-V group compound semiconductor single crystal whose composition is different from GaAs is grown on the first main surface of a substrate body 10m comprising GaAs single crystal, a sub-substrate 10e comprising GaAs single crystal is grown on the compound semiconductor layer 10k for separation, and a substrate 10 for compound growth is formed. A main compound semiconductor layer 40 having a light emitting layer 24 is grown on the first main surface of the substrate 10. Furthermore, by eliminating the compound semiconductor layer 10k with chemical etching, the sub-substrate 10e is separated from the substrate 10 for compound growth and made a remaining substrate 1 onto the second main surface of the main compound semiconductor layer 40, and a notch 1j is formed on the remaining substrate. The bottom surface of the notch 1j is made an optical extraction surface or a reflecting surface to luminescence flux of light from the light emitting layer 24. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
