| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal oxide semiconductor electrode in which a substrate is effectively cleaned and a uniform metal oxide semiconductor electrode is formed on the substrate without a crack and a pin hole. <P>SOLUTION: The method of manufacturing the oxide semiconductor electrode comprises contacting a surface of a substrate with a supercritical fluid in which a solution containing a precursor of an oxide semiconductor layer is dissolved so that cleaning and electrodeposition is performed in one envelope and the oxide semiconductor layer is formed on the surface of the substrate. According to this method, the substrate is effectively cleaned and a uniform oxide semiconductor layer is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
